Abstract
While Flash and DRAM devices based on silicon as well as magnetic hard disk drives will continue to be the dominant storage and memory technologies in 2014, this trend is expected to be impacted through 2016 and beyond by new and emerging memory technologies. These advanced technologies are based on emerging non-volatile memory technologies in combination with existing silicon cells to create high density, lower power and low cost products with higher storage capacities. These technologies include MRAM, RRAM, FRAM, PRAM and others. The promise of terabyte devices appearing in the near future to replace existing memory and storage products is based on a on a continued improvement in processing techniques. The rise of non-volatile, high endurance, fast solid-state memory will change the fundamental design of microprocessor devices and the software that runs on them. This talk will include estimates for the replacement of volatile with non-volatile memory and the eventual replacement of flash memory with a new and scalable storage technology. It will also give some guidance on how non-volatile memory will change electronic device architectures.
Learning Objectives
Technology advancing to identify new and emerging memory and storage devices
Potential candidates MRAM, RRAM, Advanced Flash
New storage mechanisms
Shift in production equipment priorities
Changes in computer design and software